2n6109, 6290 complementary power transistors page 1 31/05/05 v1.0 features: ? collector-emitter sustaining voltage- v ceo(sus) = 50v (minimum) - 2n6109, 2N6290. ? dc current gain specified to 7.0 amperes h fe = 2.3 (minimum) at i c = 7.0a - 2n6109, 2N6290. ? complementary silicon plastic power transistors. dimensions minimum maximum a 14.68 15.31 b 9.78 10.42 c 5.01 6.52 d 13.06 14.62 e 3.57 4.07 f 2.42 3.66 g 1.12 1.36 h 0.72 0.96 i 4.22 4.98 j 1.14 1.38 k 2.20 2.97 l 0.33 0.55 m 2.48 2.98 o 3.70 3.90 dimensions : millimetres pin 1. base 2. collector 3. emitter 4. collector (case). pnp npn 2n6109 2N6290 to-220 7 ampere complementary silicon power transistors 50 volts 40 watts
2n6109, 6290 complementary power transistors page 2 31/05/05 v1.0 thermal characteristic maximum ratings characteristic symbol maximum unit thermal resistance junction to case r jc 3.125 c/w parameter symbol 2n6109 2N6290 unit collector-emitter voltage v ceo 50 v collector-base voltage v cbo 60 emitter-base voltage v ebo 5.0 collector current-continuous -peak i c 7.0 10 a base current i b 3.0 total power dissipation at t c = 25c derate above 25c p d 40 0.32 w w/c operating and storage junction temperature range t j , t stg -65 to +150 c figure 1 - power derating
2n6109, 6290 complementary power transistors page 3 31/05/05 v1.0 parameter symbol minimum maximum unit off characteristics collector-emitter sustaining voltage (1) (i c = 100ma, i b = 0) v ceo(sus) 50 - v collector cut off current (v ce = 40v, i b = 0) i ceo - 1.0 ma collector cut off current (v ce = 60v, v be(off) = 1.5v) (v ce = 50v, v be(off) = 1.5v, t c = 125c) i cex - 0.1 2.0 emitter cut off current (v eb = 5.0v, i c = 0) i ebo - 1.0 electrical characteristics (t c = 25c unless otherwise noted) dc current gain (i c = 2.5a, v ce = 4.0v) (i c = 7.0a, v ce = 4.0v) h fe 30 2.3 150 - collector-emitter saturation voltage (i c = 7.0a, i b = 3.0a) v ce(sat) - 3.5 v base-emitter on voltage (i c = 7.0a, v ce = 4.0v) v be(on) - 3.0 dynamic characteristics current gain-bandwidth product (2) (i c = 0.5a, v ce = 4.0v, f = 1.0mhz) f t 2.5 10 - mhz small signal current gain (i c = 0.5a, v ce = 4.0v, f = 50khz) h fe 20 - - on characteristics (1) (1) pulse test: pulse width = 300 s, duty cycle 2.0%. (2) f t= h fe ? f test.
2n6109, 6290 complementary power transistors page 4 31/05/05 v1.0 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate i c -v ce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure - 6 curve is based on t j(pk) = 150c; t c is variable depending on the power level. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150c. at high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure 3 - turn-off time figure 2 - switching time test circuit figure 4 - dc current gain figure 5 - turn-on time figure - 6 active region safe operating area d1 must be fast recovery type, example: mb05300 used above ib = 100ma msd6100 used below ib = 100ma
2n6109, 6290 complementary power transistors page 5 31/05/05 v1.0 figure 7 - collector saturation region figure 9 - ?on? voltage figure 10 - collector cut-off region figure 8 - capacitances i c(av) maximum (a) v ceo maximum (v) h fe minimum at i c = 2.5a p tot at 25c (w) type part number 7 50 30 40 pnp 2n6109 npn 2N6290 specifications
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